| Title: | Ballistic Conductance in Oxidized Si Nanowires
|
| Authors: | G. Fagas, J.C. Greer, 2009 |
| Abstract: | The influence of local oxidation in silicon nanowires on hole transport, and hence the effect of varying the oxidation state of silicon atoms
at the wire surface, is studied using density functional theory in conjunction with a Green s function scattering method. For silicon nanowires
with growth direction along [110] and diameters of a few nanometers, it is found that the introduction of oxygen bridging and back bonds
does not significantly degrade hole transport for voltages up to several hundred millivolts relative to the valence band edge. As a result, the
mean free paths are comparable to or longer than the wire lengths envisioned for transistor and other nanoelectronics applications. Transport
along [100]-oriented nanowires is less favorable, thus providing an advantage in terms of hole mobilities for [110] nanowire orientations, as
preferentially produced in some growth methods. |
| ICHEC Project: | Band Gap Modification in Semiconductor Nanowires |
| Publication: | Nano Lett. 9, 5 (2009) pp 1856–1860 |
| URL: | http://pubs.acs.org/doi/abs/10.1021/nl8038426 |
| Keywords: | nanowires, conductance, ballistic devices, oxidation |
| Status: | Published |
